Copper Electroplating Process

The MICROFAB CU 1000 process is formulated, packaged, and quality controlled per stringent semiconductor industry requirements. 

The MICROFAB CU 1000 process has a wide current density range of 10 to 35 ASD (approximately 2 to 7 μm/min). Maximum achievable current density is dependent on tool flow dynamics, photo resist height, and wafer pattern density and complexity.


The MICROFAB CU 1000 process is engineered for high-speed pillar, RDL and copper stud/UBM applications.